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L3121B
PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes A.S.D.TM
FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. HOLDING CURRENT = 150 mA min. HIGH SURGE CURRENT CAPABILITY. IPP = 100A , 10/1000 s
SIP4
DESCRIPTION This device has been especially designed to protect a subscriber line interface circuit (SLIC) with an integrated ring generator. Used with the recommended application circuit, each line (TIP and RING) is protected against positive and negative surges. In the positive polarity, the breakdown voltage is referenced to the + VB , and in the negative polarity, the breakdown voltage is referenced to the -Vbat . Its high surge current capability makes the L3121B a reliable protectiondevice for very exposed equipment, or when series resistors are very low.
SCHEMATIC DIAGRAM
Line Gate P
Gate N
GND
CONNECTION DIAGRAM
May 1999 - Ed:4A
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L3121B
Peak Surge Voltage (V) 4000 4000 4000 level 4 level 4 1500 800 1000 2500 1000 5000 Voltage Waveform (s) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 Current Waveform (s) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 Admissible Ipp (A) 100 100 100 100 100 200 100 25 250 100 250 Necessary Resistor () 10
COMPLIES WITH THE FOLLOWING STANDARDS:
ITU-T K20 VDE0433 VDE0878 IEC1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP ITSM VMLG VMGL Tstg Tj TL Top
Peak pulse current Non repetitive surge peak on-state current Maximum voltage LINE/GND. Maximum voltage GATE/LINE. Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s Operating temperature range (see note 1)
Parameter 10/1000 s 2/10 s tp = 10 ms
Value 100 250 50 100 80 - 40 to + 150 + 150 260 - 40 to + 85
Unit A A V V C C C C
Note 1: Variation of electrical parameters is given by curves.
Pulse waveform 10/1000s
% IPP
100 50 0 tr tp
t
THERMAL RESISTANCE Symbol Rth (j-a)
Junction-to-ambient
Parameter
Value 80
Unit C/W
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L3121B
ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Symbol VRM IRM VBR VBO IH IBO IPP VGN IGN, IGP C Parameter
Stand-off voltage Reverse leakage current Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current
VRM VBR VBO IBO IH I IPP
Gate voltage Triggering gate current Capacitance
1- OPERATION WITHOUT GATE IRM @ VRM Type max. VBR @ IR min. VBO max. @ typ. note 1 A
L3121B
IBO max.
IH min. note 1
C max. note 2 pF 200
V 60 90
V 100
mA 1
V 180
mA 200
mA 500
mA 150
5 8
2- OPERATION WITH GATE VGN @ IGN = 200mA Type min. V
L3121B
IGN @ VAC = 60V min. mA 80 max. mA 200
IGP @ VAC = 60V max. mA 180
max. V 1.8
0.6
Note 1 :See the reference test circuits for IH, IBO and VBO parameters. Note 2 :VR = 5 V, F = 1MHz.
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L3121B
REFERENCE TEST CIRCUIT FOR IBO and VBO parameters:
t p = 20ms
Auto Transformer 220V/2A
static relay. K
R1
14 0
R2
240
220V
Vout IBO , IH measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST.
R D.U.T. V BAT = - 48 V Surge generator - VP
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. This test can be performed if the reference test circuit can't be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the line and GND pins of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max.
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L3121B
Fig. 1: Surge peak current versus overload duration (typical values).
ITSM(A)
40 35 30 25
F=50H z Tj initial=25C
Fig. 2: Typical relative variation of holding current versus ambient temperature.
IH [Tamb] IH [Tamb = 25C] 1.45
1.30 1.15
20 15 10 5 0 1E-2
1.0
t(s)
1E-1 1E+0 1E+1 1E+2 1E+3
0.85 Tamb (C) 0.70 -40 -20 0 20 40 60 80 85
Fig. 3: Typical relative variation of breakdown voltage versus ambient temperature.
VBR [Tamb] VBR [Tamb = 25C] 2.04 IR = 1 mA 2.00 1.06 1.02 0.98 0.94 Tamb (C) 0.90 -40 -20 0 20 40 60 80 85
Fig. 4: Junction capacitance versus reverse applied voltage.
Fig. 5: Typical relative variation of leakage current versus ambient temperature.
IR[Tj] / IR [Tj=25C] 1E+5 1E+4 1E+3
Fig. 6: Typical relative variation of peak pulse current (10/1000s) versus ambient temperature.
Ipp[Tamb] / Ipp [25C] 1.10 1.05 1.00
1E+2 1E+1 Tj(C) 1E+0 25 50 75 100 125
0.95 Tamb(C) 0.90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80
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L3121B
Typical Slic Protection Concept.
-Vbat +VB
LINE
R1 R3 TIP
-Vbat
GN
L3121B
GP
220nF
+VB
SLIC
GND
220nF
GN
R2
L3121B
GP
R4
L3000N
RING
LINE
GND
ORDER CODE
L3121B
DEVICE CODE
MARKING : Logo, Date Code, Part Number
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L3121B
PACKAGE MECHANICAL DATA SIP4 (Plastic) DIMENSIONS REF.
B C
Millimetres Min. Typ. Max. Min. 7.10 2.80 10.15 0.50 1.35 3.18 0.38 1.30 2.54 7.62 10.50 3.30 1.50 1.75 0.053 3.43 0.125 0.50 0.015 0.110
Inches Typ. Max. 0.280
A a1
I A
B b1
0.400 0.020 0.069 0.135 0.020 0.051 0.100 0.200 0.413 0.130 0.059
a1 b1 b2 Z e c2 e3 L c1
b2 C c1 c2 e e3 I L Z
Ordre code L3121B
Marking
Package SIP4
Weight 0.55 g
Base qty
Delivery mode
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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